SCT2280KEC

厂牌：ROHM

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045581811

描述：MOSFET 1200V 14A SIC TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:4V; Power Dissipation Pd:108W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175蚓; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55蚓

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商品参数

参数项参数值

ConfigurationSingle

Forward Transconductance - Min1.4 S

TechnologySiC

Vgs th - Gate-Source Threshold Voltage1.6 V

Transistor PolarityN-Channel

Id - Continuous Drain Current14 A

KRHTS8541299000

Vgs - Gate-Source Voltage- 6 V, + 22 V

Minimum Operating Temperature- 55 C

JPHTS8541290100

CAHTS8541290000

Typical Turn-On Delay Time19 ns

Rds On - Drain-Source Resistance280 mOhms

Transistor Type1 N-Channel

Maximum Operating Temperature+ 175 C

Typical Turn-Off Delay Time47 ns

ImageROHM Semiconductor SCT2280KEC

Package / CaseTO-247-3

PackagingTube

BrandROHM Semiconductor

SubcategoryMOSFETs

Mounting StyleThrough Hole

TARIC8541290000

Product CategoryMOSFET

DescriptionMOSFET MOSFET1200V14A280m OhmSiliconCarbideSiC

ManufacturerROHM Semiconductor

Factory Pack Quantity360

Qg - Gate Charge36 nC

RoHS Details

MXHTS85412999

SeriesSCT2x

Product TypeMOSFET

USHTS8541290095

Channel ModeEnhancement

Fall Time29 ns

Unit Weight1.340411 oz

CNHTS8541290000

Part # AliasesSCT2280KE

Pd - Power Dissipation108 W

Vds - Drain-Source Breakdown Voltage1200 V

Number of Channels1 Channel

Rise Time19 ns

Moisture Sensitivity Level1 (Unlimited)