在线商城 
商品参数
参数项参数值
参数项参数值
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature175°C
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Rds On (Max) @ Id, Vgs364mOhm @ 4A, 18V
FET Feature-
Power Dissipation (Max)108W (Tc)
Vgs(th) (Max) @ Id4V @ 1.4mA
Supplier Device PackageTO-247N
Grade-
Drive Voltage (Max Rds On, Min Rds On)18V
Vgs (Max)+22V, -6V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds667 pF @ 800 V
Qualification-
Moisture Sensitivity Level1 (Unlimited)