参数项参数值
参数项参数值
DC Current Gain hFE Max450 at - 1 mA, - 10 V
Collector- Base Voltage VCBO- 60 V
Collector- Emitter Voltage VCEO Max- 60 V
Continuous Collector Current- 600 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage1.6 V
DC Collector/Base Gain hfe Min100 at - 1 mA, - 10 V
Width9.4 mm
Height6.6 mm
Length9.4 mm
Package / CaseTO-39-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 200 C
Minimum Operating Temperature- 65 C
CNHTS8541290000
TARIC8541210000
ImageWelwyn Components / TT Electronics 2N2905A
BrandWelwyn Components / TT Electronics
Factory Pack Quantity30
Pd - Power Dissipation3 W
Product TypeBJTs - Bipolar Transistors
ManufacturerTT Electronics
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT TRANS BI-POLAR SS
USHTS8541290095