参数项参数值
参数项参数值
PackagingTray
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.4A (Tj)
Rds On (Max) @ Id, Vgs880mOhm @ 1A, 15V
FET Feature-
Power Dissipation (Max)70W (Tc)
Vgs(th) (Max) @ Id5.7V @ 1.2mA
Supplier Device PackagePG-TO247-3-U04
Grade-
Drive Voltage (Max Rds On, Min Rds On)12V, 15V
Vgs (Max)15V, 12V
Drain to Source Voltage (Vdss)1700 V
Gate Charge (Qg) (Max) @ Vgs5.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds233 pF @ 1000 V
Qualification-
Moisture Sensitivity LevelNot Applicable