参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current2.6 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
KRHTS8541299000
Typical Turn-On Delay Time25 ns
ManufacturerSTMicroelectronics
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Rds On - Drain-Source Resistance7 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time51 ns
Package / CaseTO-3PF-3
Factory Pack Quantity300
BrandSTMicroelectronics
TARIC8541290000
Maximum Operating Temperature+ 150 C
RoHS Details
Mounting StyleThrough Hole
PackagingTube
ImageSTMicroelectronics STFW3N170
SubcategoryMOSFETs
Qg - Gate Charge44 nC
Product CategoryMOSFET
DescriptionMOSFET PTD HIGH VOLTAGE
Product TypeMOSFET
MXHTS85412999
SeriesSTFW3N170
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.194007 oz
Fall Time53 ns
CNHTS8541290000
TradenamePowerMESH
Vds - Drain-Source Breakdown Voltage1.7 kV
Number of Channels1 Channel
Rise Time9 ns
Moisture Sensitivity Level1 (Unlimited)