PJB120N03S-AU_R2_002A1

厂牌：Panjit International Inc.

包装：Cut Tape (CT) 1

类目：--

编号：B000045592171

描述：MOSFETs 30V N-Channel Enhancement Mode MOSFET, 30 V, 120 A

商品参数

参数项参数值

PackagingTape & Reel (TR)

Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Mounting TypeSurface Mount

Operating Temperature-55°C ~ 175°C (TJ)

TechnologyMOSFET (Metal Oxide)

FET TypeN-Channel

Current - Continuous Drain (Id) @ 25°C35A (Ta), 120A (Tc)

Rds On (Max) @ Id, Vgs1.8mOhm @ 90A, 10V

FET Feature-

Power Dissipation (Max)3.8W (Ta), 250W (Tc)

Vgs(th) (Max) @ Id2.5V @ 250µA

Supplier Device PackageTO-263AB

GradeAutomotive

Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V

Vgs (Max)±20V

Drain to Source Voltage (Vdss)30 V

Gate Charge (Qg) (Max) @ Vgs90 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds6200 pF @ 25 V

QualificationAEC-Q101

Moisture Sensitivity Level1 (Unlimited)