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BSC120N03MSGATMA1
厂牌：Infineon Technologies
包装：Cut Tape (CT) 1
类目：元器件 > 分立器件 > MOSFET
编号：B000045592215
描述：MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min25 S
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
KRHTS8541299000
Minimum Operating Temperature- 55 C
Transistor PolarityN-Channel
Id - Continuous Drain Current39 A
JPHTS8541290100
Vgs - Gate-Source Voltage- 20 V, + 20 V
CAHTS8541290000
Length5.9 mm
ImageInfineon Technologies BSC120N03MSGATMA1
Height1.27 mm
Typical Turn-On Delay Time7.9 ns
Rds On - Drain-Source Resistance10 mOhms
Transistor Type1 N-Channel
Product CategoryMOSFET
Typical Turn-Off Delay Time7 ns
DescriptionMOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M
Package / CaseTDSON-8
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity5000
Width5.15 mm
Mounting StyleSMD/SMT
RoHS Details
TARIC8541290000
BrandInfineon Technologies
Qg - Gate Charge20 nC
MXHTS85412999
ManufacturerInfineon
SeriesOptiMOS 3M
Product TypeMOSFET
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Fall Time5 ns
Unit Weight0.021341 oz
CNHTS8541290000
Part # AliasesBSC120N03MS G SP000311516
Pd - Power Dissipation28 W
TradenameOptiMOS
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time4.4 ns
Moisture Sensitivity Level1 (Unlimited)