BSC020N03MSGATMA1

厂牌:Infineon Technologies
包装:Tape & Reel (TR) 1
类目:元器件 > 分立器件 > MOSFET
编号:B000045592225
描述:Trans MOSFET N-CH 30V 25A 8-Pin TDSON EP T/R
最新价格近期成交29单+
数量价格(含税)
5000¥4.1841
10000¥3.9239
15000¥3.8328
库存:15,000交期:4-7Days起订:5000增量:5000
数量:
X
4.1841(单价)
合计:
¥20920.50
商品满500包邮
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min60 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time27 ns
Rds On - Drain-Source Resistance1.7 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time36 ns
Width5.15 mm
MXHTS85412999
Height1.27 mm
Length5.9 mm
KRHTS8541299000
Qg - Gate Charge60 nC
CNHTS8541290000
Package / CaseTDSON-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time14 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
SeriesOptiMOS 3M
BrandInfineon Technologies
ImageInfineon Technologies BSC020N03MSGATMA1
Unit Weight0.003880 oz
Product CategoryMOSFET
Factory Pack Quantity5000
SubcategoryMOSFETs
Product TypeMOSFET
ManufacturerInfineon
Pd - Power Dissipation96 W
Part # AliasesBSC020N03MS G SP000311503
DescriptionMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M
USHTS8541290095
Vds - Drain-Source Breakdown Voltage30 V
TradenameOptiMOS
Number of Channels1 Channel
Rise Time14 ns
Moisture Sensitivity Level1 (Unlimited)