参数项参数值
参数项参数值
Forward Transconductance - Min65 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time11 ns
Rds On - Drain-Source Resistance1.7 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time42 ns
Width5.15 mm
Height1.27 mm
Length5.9 mm
MXHTS85412999
Qg - Gate Charge93 nC
KRHTS8541299000
Package / CaseTDSON-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CAHTS8541290000
Minimum Operating Temperature- 55 C
Fall Time7 ns
CNHTS8541290000
PackagingReel
PackagingCut Tape
TARIC8541290000
Unit Weight0.003880 oz
RoHS Details
SeriesOptiMOS 3
Pd - Power Dissipation96 W
BrandInfineon Technologies
Part # AliasesBSC020N03LS G SP000237662
ImageInfineon Technologies BSC020N03LSGATMA1
Product TypeMOSFET
Factory Pack Quantity5000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage30 V
ManufacturerInfineon
Product CategoryMOSFET
Number of Channels1 Channel
Rise Time7 ns
USHTS8541290095
TradenameOptiMOS
DescriptionMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
Moisture Sensitivity Level1 (Unlimited)