参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time7 ns
Rds On - Drain-Source Resistance96 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time16 ns
Width1.6 mm
Height0.85 mm
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-457-6
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
ProductMOSFET Small Signal
CNHTS8541290000
Channel ModeEnhancement
Fall Time4 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
SeriesRSQ020N03
ImageROHM Semiconductor RSQ020N03TR
BrandROHM Semiconductor
Pd - Power Dissipation1.25 W
Factory Pack Quantity3000
Product TypeMOSFET
Part # AliasesRSQ020N03
ManufacturerROHM Semiconductor
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET Med Pwr, Sw MOSFET N Chan, 30V, 2A
Vds - Drain-Source Breakdown Voltage30 V
USHTS8541290095
Number of Channels1 Channel
Rise Time9 ns
Moisture Sensitivity Level1 (Unlimited)