参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time8 ns
Rds On - Drain-Source Resistance138 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time17 ns
Width1.6 mm
Height0.85 mm
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-457-6
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
ProductMOSFET Small Signal
Channel ModeEnhancement
CNHTS8541290000
Fall Time11 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.000494 oz
SeriesRTQ020N03
ImageROHM Semiconductor RTQ020N03TR
BrandROHM Semiconductor
Pd - Power Dissipation1.25 W
Factory Pack Quantity3000
Product TypeMOSFET
Part # AliasesRTQ020N03
ManufacturerROHM Semiconductor
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET N-CH 30V 2A TSMT6
Vds - Drain-Source Breakdown Voltage30 V
USHTS8541290095
Number of Channels1 Channel
Rise Time11 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)