RFD20N03

厂牌：Harris Corporation

包装：Bulk 1

类目：--

编号：B000045592279

描述：N-CHANNEL POWER MOSFET

商品参数

参数项参数值

PackagingBulk

Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA

Mounting TypeThrough Hole

Operating Temperature-55°C ~ 175°C (TJ)

TechnologyMOSFET (Metal Oxide)

FET TypeN-Channel

Current - Continuous Drain (Id) @ 25°C20A (Tc)

Rds On (Max) @ Id, Vgs25mOhm @ 20A, 10V

FET Feature-

Power Dissipation (Max)90W (Tc)

Vgs(th) (Max) @ Id4V @ 250µA

Supplier Device PackageIPAK

Grade-

Drive Voltage (Max Rds On, Min Rds On)10V

Vgs (Max)±20V

Drain to Source Voltage (Vdss)30 V

Gate Charge (Qg) (Max) @ Vgs75 nC @ 20 V

Input Capacitance (Ciss) (Max) @ Vds1150 pF @ 25 V

Qualification-

Moisture Sensitivity Level1 (Unlimited)