IPB120N03S4L03ATMA1

IPB120N03S4L03ATMA1

厂牌：Infineon Technologies

包装：Tape & Reel (TR) 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045592283

描述：MOSFET N-CH 30V 120A D2PAK

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1.6 V

TechnologySi

Id - Continuous Drain Current120 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 16 V, + 16 V

QualificationAEC-Q101

Typical Turn-On Delay Time7 ns

Width9.25 mm

Rds On - Drain-Source Resistance3.7 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time21 ns

Length10 mm

Height4.4 mm

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge55 nC

Package / CaseTO-263-3

Mounting StyleSMD/SMT

JPHTS8541290100

CAHTS8541290000

Maximum Operating Temperature+ 175 C

Minimum Operating Temperature- 55 C

PackagingCut Tape

PackagingReel

CNHTS8541290000

BrandInfineon Technologies

ManufacturerInfineon

Factory Pack Quantity1000

TARIC8541290000

Product CategoryMOSFET

DescriptionMOSFET MOSFET_(20V 40V)

Fall Time34 ns

ImageInfineon Technologies IPB120N03S4L03ATMA1

Product TypeMOSFET

SubcategoryMOSFETs

Unit Weight0.139332 oz

USHTS8541290095

Part # AliasesIPB120N03S4L-03 SP000936514

Pd - Power Dissipation79 W

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels1 Channel

Rise Time24 ns

Moisture Sensitivity Level1 (Unlimited)