BSO220N03MDGXUMA1

厂牌:Infineon Technologies
包装:Tape & Reel (TR) 1
类目:元器件 > 分立器件 > MOSFET
编号:B000045592307
描述:Infineon MOSFET BSO220N03MD G
最新价格近期成交11单+
数量价格(含税)
2500¥2.6485
5000¥2.4441
7500¥2.3399
12500¥2.2225
17500¥2.1529
25000¥2.0855
库存:7,500交期:4-7Days起订:2500增量:2500
数量:
X
2.6485(单价)
合计:
¥6621.25
商品满500包邮
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min9 S
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage2.1 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current7.7 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time5.7 ns
Width3.9 mm
Rds On - Drain-Source Resistance21.6 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time6.4 ns
Height1.75 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge7.8 nC
Package / CaseSO-8
JPHTS8541290100
CAHTS8541290000
Moisture SensitiveYes
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
PackagingReel
PackagingMouseReel
PackagingCut Tape
SubcategoryMOSFETs
ImageInfineon Technologies BSO220N03MDGXUMA1
Channel ModeEnhancement
BrandInfineon Technologies
Fall Time3.4 ns
Product TypeMOSFET
SeriesOptiMOS 3M
ManufacturerInfineon
USHTS8541290095
Unit Weight0.019048 oz
Factory Pack Quantity2500
Product CategoryMOSFET
DescriptionMOSFET N-Ch 30V 7.7A DSO-8 OptiMOS 3M
Part # AliasesBSO220N03MD G SP000447478
Pd - Power Dissipation2 W
TradenameOptiMOS
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time2.8 ns
Moisture Sensitivity Level3 (168 Hours)