参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current4 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6 ns
Rds On - Drain-Source Resistance2 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time41 ns
Qg - Gate Charge10 nC
CNHTS8541290000
Package / CaseDPAK-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
Fall Time18 ns
TARIC8541290000
RoHS Details
SeriesP7
ImageInfineon Technologies IPD95R2K0P7ATMA1
BrandInfineon Technologies
Unit Weight0.013673 oz
Product TypeMOSFET
Factory Pack Quantity2500
Product CategoryMOSFET
ManufacturerInfineon
SubcategoryMOSFETs
Pd - Power Dissipation37 W
Part # AliasesIPD95R2K0P7 SP001819720
DescriptionMOSFET LOW POWER_NEW
USHTS8542390001
Vds - Drain-Source Breakdown Voltage950 V
TradenameCoolMOS
Number of Channels1 Channel
Rise Time13 ns
Moisture Sensitivity Level1 (Unlimited)