参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current3.8 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time4.8 ns
MXHTS85412999
CNHTS8541290000
KRHTS8541299000
Rds On - Drain-Source Resistance90 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time22.4 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Package / CaseSOT-23-3
PackagingCut Tape
PackagingReel
PackagingMouseReel
Mounting StyleSMD/SMT
Qg - Gate Charge8.2 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMG2307LQ-7
SeriesDMG2307L
Factory Pack Quantity3000
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 30V P-Ch Enhancement Mode
Channel ModeEnhancement
Fall Time13.4 ns
USHTS8541290095
Unit Weight0.000282 oz
Pd - Power Dissipation1.36 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time7.3 ns
Moisture Sensitivity Level1 (Unlimited)