参数项参数值
参数项参数值
Forward Transconductance - Min3 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage620 mV
TechnologySi
Id - Continuous Drain Current3.8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time1.14 ns
Rds On - Drain-Source Resistance54 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15.02 ns
Width1.3 mm
Height1 mm
Length2.9 mm
MXHTS85412101
Qg - Gate Charge8.2 nC
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CAHTS8541210000
Minimum Operating Temperature- 55 C
Fall Time3.26 ns
CNHTS8541290000
ProductMOSFET Small Signal
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
Unit Weight0.001023 oz
RoHS Details
SeriesDMN3150
Pd - Power Dissipation1.4 W
BrandDiodes Incorporated
ImageDiodes Incorporated DMN3150L-7
Product TypeMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage30 V
ManufacturerDiodes Incorporated
Product CategoryMOSFET
Number of Channels1 Channel
Rise Time3.49 ns
USHTS8541210095
DescriptionMOSFET N-Channel