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DMN3135LVT-7
厂牌：Diodes Incorporated
包装：Tape & Reel (TR) 1
类目：元器件 > 分立器件 > MOSFET
编号：B000045593055
描述：场效应管(MOSFET) DMN3135LVT-7 SOT-26
商品参数
参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1.3 V
TechnologySi
Id - Continuous Drain Current3.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time2.6 ns
Rds On - Drain-Source Resistance60 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time13.1 ns
MXHTS85412101
Qg - Gate Charge4.1 nC
KRHTS8541219000
Package / CaseTSOT-26-6
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
Channel ModeEnhancement
Fall Time2.5 ns
CNHTS8541210000
PackagingMouseReel
PackagingReel
PackagingCut Tape
Unit Weight0.000459 oz
TARIC8541210000
ImageDiodes Incorporated DMN3135LVT-7
Pd - Power Dissipation1.27 W
RoHS Details
SeriesDMN31
Factory Pack Quantity3000
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Vds - Drain-Source Breakdown Voltage30 V
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
Number of Channels2 Channel
Rise Time4.6 ns
DescriptionMOSFET MOSFET BVDSS: 31V-40 1V-40V TSOT23 T&R 3K
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)