XPN6R706NC,L1XHQ

XPN6R706NC,L1XHQ

厂牌：Toshiba Semiconductor and Storage

包装：Cut Tape (CT) 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045593763

描述：Trans MOSFET N-CH Si 60V 40A 8-Pin TSOP Advance(WF) EP T/R Automotive AEC-Q101

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商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.5 V

TechnologySi

Id - Continuous Drain Current40 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

QualificationAEC-Q101

Typical Turn-On Delay Time23 ns

Rds On - Drain-Source Resistance6.7 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time49 ns

Qg - Gate Charge35 nC

Package / CaseTSON-Advance-8

Mounting StyleSMD/SMT

Minimum Operating Temperature-

Maximum Operating Temperature+ 175 C

Channel ModeEnhancement

Fall Time11 ns

PackagingCut Tape

PackagingReel

TARIC8541290000

RoHS Details

Unit Weight0.001023 oz

SeriesU-MOSVIII-H

Factory Pack Quantity5000

BrandToshiba

Pd - Power Dissipation100 W

Product TypeMOSFET

Part # AliasesXPN6R706NC,L1XHQ(O

Product CategoryMOSFET

ManufacturerToshiba

SubcategoryMOSFETs

DescriptionMOSFET 100W 1MHz Automotive; AEC-Q101

Vds - Drain-Source Breakdown Voltage60 V

USHTS8541290095

Number of Channels1 Channel

Rise Time10 ns

Moisture Sensitivity Level1 (Unlimited)