在线商城 
SI2304DDS-T1-GE3
厂牌：Vishay Siliconix
包装：Cut Tape (CT) 1
类目：元器件 > 分立器件 > MOSFET
编号：B000045594075
描述：MOSFET N-CH 30V 3.6A SOT23
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min11 S
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current3.6 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
Minimum Operating Temperature- 55 C
JPHTS8541290100
Typical Turn-On Delay Time5 ns
CAHTS8541290000
Rds On - Drain-Source Resistance60 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time10 ns
RoHS Details
Package / CaseSOT-23-3
ImageVishay Semiconductors SI2304DDS-T1-GE3
Factory Pack Quantity3000
PackagingMouseReel
PackagingCut Tape
PackagingReel
Maximum Operating Temperature+ 150 C
TARIC8541290000
BrandVishay Semiconductors
SubcategoryMOSFETs
Mounting StyleSMD/SMT
Product CategoryMOSFET
ManufacturerVishay
DescriptionMOSFET 30V Vds 20V Vgs SOT-23
Qg - Gate Charge6.7 nC
MXHTS85412999
SeriesSI2
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.000282 oz
Fall Time5 ns
CNHTS8541290000
Part # AliasesSI2304DDS-GE3
Pd - Power Dissipation1.7 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time12 ns
Moisture Sensitivity Level1 (Unlimited)