RGW80TK65DGVC11

厂牌：Rohm Co Ltd

包装：TUBE 1

类目：元器件 > 分立器件 > IGBT晶体管

编号：B000045595101

描述：IGBT SINGLE 650V 39A TO-3PFM; DC Collector Current:39A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:81W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3PFM; No. of Pins:3Pins; Operating Temperature Max:175蚓; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018)

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商品参数

参数项参数值

Gate-Emitter Leakage Current200 nA

Collector- Emitter Voltage VCEO Max650 V

ConfigurationSingle

TechnologySi

Maximum Gate Emitter Voltage30 V

Collector-Emitter Saturation Voltage1.5 V

Mounting StyleThrough Hole

Package / CaseTO-3PFM

Minimum Operating Temperature- 40 C

Maximum Operating Temperature+ 175 C

TARIC8541290000

RoHS Details

PackagingTube

SubcategoryIGBTs

ImageROHM Semiconductor RGW80TK65DGVC11

BrandROHM Semiconductor

Product TypeIGBT Transistors

ManufacturerROHM Semiconductor

Factory Pack Quantity1

USHTS8541290095

Product CategoryIGBT Transistors

DescriptionIGBT Transistors 650V 40A TO-3PFM Field Stp Trnch IGBT

Continuous Collector Current at 25 C39 A

Pd - Power Dissipation81 W

Continuous Collector Current Ic Max39 A

Moisture Sensitivity Level1 (Unlimited)