参数项参数值
参数项参数值
Forward Transconductance - Min370 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current217 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time21 ns
Rds On - Drain-Source Resistance1.2 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time68 ns
Width5.05 mm
Height0.7 mm
Length6.35 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge123 nC
Package / CaseDirectFET-ME
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time58 ns
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541290000
ImageInfineon / IR IRF7480MTRPBF
RoHS Details
Unit Weight0.005503 oz
Factory Pack Quantity4800
Product TypeMOSFET
Pd - Power Dissipation96 W
BrandInfineon / IR
Product CategoryMOSFET
ManufacturerInfineon
SubcategoryMOSFETs
DescriptionMOSFET 40V Single N-Channel HEXFET Power MOSFET
Vds - Drain-Source Breakdown Voltage40 V
TradenameStrongIRFET
USHTS8541290095
Number of Channels1 Channel
Rise Time70 ns
Moisture Sensitivity Level1 (Unlimited)