参数项参数值
参数项参数值
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mA
ConfigurationSingle
Transistor PolarityNPN
DC Collector/Base Gain hfe Min35
Width1.24 mm
Height0.85 mm
Length2.1 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSC-70/SOT-323-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.001093 oz
TARIC8541210000
ImageON Semiconductor MUN5211T1G
Pd - Power Dissipation310 mW
RoHS Details
Factory Pack Quantity3000
Typical Resistor Ratio1
SeriesMUN5211
ManufacturerON Semiconductor
Typical Input Resistor10 kOhms
BrandON Semiconductor
Product CategoryBipolar Transistors - Pre-Biased
Product TypeBJTs - Bipolar Transistors - Pre-Biased
SubcategoryTransistors
DescriptionBipolar Transistors - Pre-Biased SS BR XSTR NPN 50V
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)