参数项参数值
参数项参数值
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current0.1 A
ConfigurationSingle
Transistor PolarityNPN
QualificationAEC-Q101
MXHTS85412101
Width1.24 mm
DC Collector/Base Gain hfe Min35
Height0.85 mm
Length2.1 mm
KRHTS8541219000
CNHTS8541210000
Package / CaseSC-70-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
CAHTS8541210000
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
RoHS Details
ImageON Semiconductor SMUN5211T1G
SeriesMUN5211
Factory Pack Quantity3000
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors - Pre-Biased
Unit Weight0.000219 oz
ManufacturerON Semiconductor
SubcategoryTransistors
Product CategoryBipolar Transistors - Pre-Biased
DescriptionBipolar Transistors - Pre-Biased SS BR XSTR SPCL TR
Pd - Power Dissipation202 mW
USHTS8541210095
Typical Resistor Ratio1
Typical Input Resistor10 kOhms
Moisture Sensitivity Level1 (Unlimited)