参数项参数值
参数项参数值
ConfigurationSingle
MXHTS85412999
Vgs th - Gate-Source Threshold Voltage4.6 V
TechnologySi
Id - Continuous Drain Current43 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time17.4 ns
Length5 mm
Height1.1 mm
Rds On - Drain-Source Resistance37 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time37.8 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Package / CaseLFPAK56-5
CNHTS8541290000
Maximum Operating Temperature+ 175 C
Mounting StyleSMD/SMT
Qg - Gate Charge41 nC
Factory Pack Quantity1500
ImageNexperia PSMN020-100YS,115
PackagingCut Tape
PackagingMouseReel
PackagingReel
Product TypeMOSFET
DescriptionMOSFET N-CHANNEL 100V STD LEVEL MOSFET
BrandNexperia
Product CategoryMOSFET
TARIC8541290000
RoHS Details
SubcategoryMOSFETs
ManufacturerNexperia
Channel ModeEnhancement
Fall Time15 ns
Unit Weight0.002896 oz
USHTS8541290095
Part # Aliases934064431115
Pd - Power Dissipation106 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time18.1 ns
TypeN-Channel 100V 20.5 mOhms Standard Level MOSFET in LFPAK
Moisture Sensitivity Level1 (Unlimited)