参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current44 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time22 ns
Rds On - Drain-Source Resistance50 MOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time72 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge68 nC
Mounting StyleSMD/SMT
Package / CaseHSOF-8
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Factory Pack Quantity2000
CNHTS8541290000
DescriptionMOSFET HIGH POWER_NEW
BrandInfineon Technologies
Channel ModeEnhancement
ImageInfineon Technologies IPT60R050G7XTMA1
Product TypeMOSFET
SeriesCoolMOS C7 Gold
TARIC8541290000
Fall Time3 ns
ManufacturerInfineon
Product CategoryMOSFET
RoHS Details
Unit Weight0.027096 oz
SubcategoryMOSFETs
Part # AliasesIPT60R050G7 SP001615912
Pd - Power Dissipation245 W
USHTS8541290095
TradenameCoolMOS
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time6 ns
Moisture Sensitivity Level1 (Unlimited)