参数项参数值
参数项参数值
Forward Transconductance - Min4.5 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current17 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time4.9 ns
Width6.22 mm
Rds On - Drain-Source Resistance75 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time19 ns
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge20 nC
Mounting StyleSMD/SMT
Package / CaseTO-252-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingTube
Factory Pack Quantity3000
CNHTS8541290000
BrandInfineon / IR
ManufacturerInfineon
Channel ModeEnhancement
TARIC8541290000
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET AUTO 55V 1 N-CH HEXFET 75mOhms
ImageInfineon / IR AUIRFR024N
Fall Time27 ns
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.139332 oz
USHTS8541290095
Pd - Power Dissipation45 W
Vds - Drain-Source Breakdown Voltage55 V
Number of Channels1 Channel
Rise Time34 ns
Moisture Sensitivity Level1 (Unlimited)