参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current41 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 25 V, + 25 V
QualificationAEC-Q101
Rds On - Drain-Source Resistance65 mOhms
Qg - Gate Charge53 nC
Package / CaseTO-263-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
PackagingReel
PackagingCut Tape
TARIC8541290000
Unit Weight0.048678 oz
SeriesSTB41N40DM6AG
Pd - Power Dissipation250 W
BrandSTMicroelectronics
ImageSTMicroelectronics STB41N40DM6AG
ManufacturerSTMicroelectronics
Product TypeMOSFET
SubcategoryMOSFETs
Factory Pack Quantity1000
Product CategoryMOSFET
Number of Channels1 Channel
USHTS8541290095
DescriptionMOSFET PTD HIGH VOLTAGE
Moisture Sensitivity Level1 (Unlimited)