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FDB075N15A-F085
厂牌：onsemi
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000045653586
描述：MOSFET N-CH 150V 110A 175DEG C 333W
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current110 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time33 ns
Rds On - Drain-Source Resistance20 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time76 ns
Width9.65 mm
Height4.83 mm
Length10.67 mm
MXHTS85412999
Qg - Gate Charge95 nC
KRHTS8541299000
Package / CaseTO-263-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 175 C
JPHTS8541290100
CNHTS8541290000
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time25 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
BrandON Semiconductor / Fairchild
Unit Weight0.046296 oz
RoHS Details
Factory Pack Quantity800
ImageON Semiconductor / Fairchild FDB075N15A-F085
Pd - Power Dissipation333 W
Product CategoryMOSFET
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage150 V
DescriptionMOSFET 150V, 110A, 5.5mO, D2PAK<BR>N-Channel PowerTrench
TradenamePowerTrench
Number of Channels1 Channel
Rise Time46 ns
Moisture Sensitivity Level1 (Unlimited)