参数项参数值
参数项参数值
Forward Transconductance - Min164 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current130 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance6.25 mOhms
Transistor Type1 N-Channel
Width9.65 mm
Height4.83 mm
Length10.67 mm
Qg - Gate Charge77 nC
KRHTS8541299000
Package / CaseTO-263-3
Mounting StyleSMD/SMT
JPHTS8541290100
CNHTS8541290000
CAHTS8541290000
Fall Time21 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
Unit Weight0.046296 oz
BrandON Semiconductor / Fairchild
RoHS Details
SeriesFDB075N15A
Factory Pack Quantity800
ImageON Semiconductor / Fairchild FDB075N15A
Pd - Power Dissipation333 W
Product CategoryMOSFET
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage150 V
DescriptionMOSFET 150V N-Channel PowerTrench MOSFET
TradenamePowerTrench
Number of Channels1 Channel
Rise Time37 ns
Moisture Sensitivity Level1 (Unlimited)