参数项参数值
参数项参数值
DC Current Gain hFE Max160
Gain Bandwidth Product fT30 MHz
Collector- Base Voltage VCBO- 230 V
Maximum DC Collector Current- 15 A
Collector- Emitter Voltage VCEO Max- 230 V
Continuous Collector Current- 15 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
ManufacturerToshiba
KRHTS8541299000
PackagingTray
Factory Pack Quantity100
BrandToshiba
Minimum Operating Temperature- 55 C
Collector-Emitter Saturation Voltage- 3 V
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Package / Case2-21F1A-3
CAHTS8541210000
SubcategoryTransistors
DC Collector/Base Gain hfe Min80
TARIC8541290000
RoHS Details
Product TypeBJTs - Bipolar Transistors
Mounting StyleThrough Hole
ImageToshiba TTA1943(Q)
DescriptionBipolar Transistors - BJT PNP 150W -15A 80 HFE -3V -230V
MXHTS85412101
Product CategoryBipolar Transistors - BJT
SeriesTTA1943
USHTS8541290095
Unit Weight0.194007 oz
CNHTS8541290000
Pd - Power Dissipation150 W
Moisture Sensitivity Level1 (Unlimited)