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TK9J90E,S1E
厂牌：Toshiba Semiconductor and Storage
包装：Tube 1
类目：元器件 > 分立器件 > MOSFET
编号：B000045655176
描述：MOSFET N-CH 900V 9A TO3P
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current9 A
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time80 ns
Width4.5 mm
Rds On - Drain-Source Resistance1.3 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time140 ns
Height20 mm
Length15.5 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge46 nC
Mounting StyleThrough Hole
Package / CaseTO-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
PackagingTube
Maximum Operating Temperature+ 150 C
Factory Pack Quantity25
CNHTS8541290000
BrandToshiba
DescriptionMOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN
Channel ModeEnhancement
ImageToshiba TK9J90E,S1E
Product TypeMOSFET
SeriesTK9J90E
ManufacturerToshiba
TARIC8541290000
Fall Time35 ns
Product CategoryMOSFET
RoHS Details
Unit Weight0.245577 oz
SubcategoryMOSFETs
Pd - Power Dissipation250 W
USHTS8541290095
TradenameMOSVIII
Vds - Drain-Source Breakdown Voltage900 V
Number of Channels1 Channel
Rise Time40 ns
Moisture Sensitivity Level1 (Unlimited)