参数项参数值
参数项参数值
DC Current Gain hFE Max75
Gain Bandwidth Product fT30 MHz
Collector- Base Voltage VCBO250 V
Maximum DC Collector Current15 A
Collector- Emitter Voltage VCEO Max250 V
Continuous Collector Current15 ADC
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.4 V
Width4.8 mm
Length15.6 mm
Height18.7 mm
DC Collector/Base Gain hfe Min75
MXHTS85412999
KRHTS8541299000
Package / CaseTO-3P-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
PackagingTube
BrandON Semiconductor
CNHTS8541290000
ManufacturerON Semiconductor
Factory Pack Quantity30
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SeriesNJW1302
TARIC8541290000
RoHS Details
ImageON Semiconductor NJW1302G
DescriptionBipolar Transistors - BJT 200W TO-3P PNP
SubcategoryTransistors
Unit Weight0.238311 oz
USHTS8541290095
Moisture Sensitivity LevelNot Applicable