参数项参数值
参数项参数值
DC Current Gain hFE Max80
Gain Bandwidth Product fT4 MHz
Collector- Base Voltage VCBO400 V
Maximum DC Collector Current16 A
Collector- Emitter Voltage VCEO Max250 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage1.4 V
Width4.8 mm
Length15.6 mm
Height18.7 mm
DC Collector/Base Gain hfe Min20
MXHTS85412999
KRHTS8541299000
Package / CaseTO-3P-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
PackagingTube
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
BrandON Semiconductor
SeriesNJW21194
ManufacturerON Semiconductor
Product CategoryBipolar Transistors - BJT
TARIC8541290000
Factory Pack Quantity30
Product TypeBJTs - Bipolar Transistors
RoHS Details
DescriptionBipolar Transistors - BJT 200W NPN
Unit Weight0.238311 oz
SubcategoryTransistors
USHTS8541290095
Pd - Power Dissipation200 mW
Moisture Sensitivity LevelNot Applicable