参数项参数值
参数项参数值
DC Current Gain hFE Max160
Gain Bandwidth Product fT30 MHz
Collector- Base Voltage VCBO230 V
Maximum DC Collector Current15 A
Collector- Emitter Voltage VCEO Max230 V
Continuous Collector Current15 A
ConfigurationSingle
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.4 V
DC Collector/Base Gain hfe Min55
Mounting StyleThrough Hole
Package / CaseTO-3P-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541210000
RoHS Details
ImageToshiba 2SC5200-O(S1,F
PackagingTube
SubcategoryTransistors
BrandToshiba
ManufacturerToshiba
Series2SC
Unit Weight0.343921 oz
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity25
USHTS8541290095
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT TRANS POWER
Pd - Power Dissipation150 W
Moisture Sensitivity Level1 (Unlimited)