2N4900

2N4900

厂牌：iscsemi

包装：TRAY 1

类目：元器件 > 分立器件 > 双极晶体管

编号：B000045662785

描述： Silicon PNP Power Transistors

商品参数

参数项参数值

参数项参数值

DC Current Gain hFE Max100

Collector- Base Voltage VCBO80 V

Maximum DC Collector Current1 A

Collector- Emitter Voltage VCEO Max80 V

ConfigurationSingle

TechnologySi

Transistor PolarityPNP

Emitter- Base Voltage VEBO5 V

Collector-Emitter Saturation Voltage1.3 V

DC Collector/Base Gain hfe Min20

MXHTS85412999

KRHTS8541299000

Package / CaseTO-66-2

Mounting StyleThrough Hole

JPHTS8541290100

CAHTS8541290000

CNHTS8541290000

PackagingTray

ImageMicrochip / Microsemi 2N4900

TARIC8541290000

RoHSN

Factory Pack Quantity100

Product TypeBJTs - Bipolar Transistors

Pd - Power Dissipation25 W

BrandMicrochip / Microsemi

Product CategoryBipolar Transistors - BJT

SubcategoryTransistors

ManufacturerMicrochip

DescriptionBipolar Transistors - BJT Power BJT

USHTS8541290095