2N6315

2N6315

厂牌：iscsemi

包装：TRAY 1

类目：元器件 > 分立器件 > 双极晶体管

编号：B000045663025

描述：国产品牌，原厂价格

商品参数

参数项参数值

参数项参数值

DC Current Gain hFE Max100 at 2.5 A, 4 V

Collector- Base Voltage VCBO80 V

Collector- Emitter Voltage VCEO Max80 V

ConfigurationSingle

TechnologySi

Transistor PolarityNPN

Emitter- Base Voltage VEBO5 V

Collector-Emitter Saturation Voltage2 V

DC Collector/Base Gain hfe Min20 at 2.5 A, 4 V

Package / CaseTO-66-2

Mounting StyleThrough Hole

Minimum Operating Temperature- 65 C

Maximum Operating Temperature+ 200 C

PackagingTray

ImageMicrochip / Microsemi 2N6315

RoHSN

Unit Weight0.723969 oz

Factory Pack Quantity100

Product TypeBJTs - Bipolar Transistors

Pd - Power Dissipation90 W

BrandMicrochip / Microsemi

Product CategoryBipolar Transistors - BJT

SubcategoryTransistors

ManufacturerMicrochip

DescriptionBipolar Transistors - BJT Power BJT