2N3791

2N3791

厂牌：iscsemi

包装：TRAY 1

类目：元器件 > 分立器件 > 双极晶体管

编号：B000045663109

描述：国产品牌，原厂价格

商品参数

参数项参数值

参数项参数值

DC Current Gain hFE Max150 at 1 A, 2 VDC

Collector- Base Voltage VCBO60 V

Maximum DC Collector Current10 A

Collector- Emitter Voltage VCEO Max60 V

ConfigurationSingle

TechnologySi

Transistor PolarityPNP

Emitter- Base Voltage VEBO7 V

Collector-Emitter Saturation Voltage1 V

DC Collector/Base Gain hfe Min50 at 1 A, 2 VDC

MXHTS85412999

KRHTS8541299000

Package / CaseTO-66-2

Mounting StyleThrough Hole

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 65 C

Maximum Operating Temperature+ 200 C

CNHTS8541290000

PackagingTray

ImageMicrochip / Microsemi 2N3791

TARIC8541290000

RoHSN

Factory Pack Quantity100

Product TypeBJTs - Bipolar Transistors

Pd - Power Dissipation85.7 W

BrandMicrochip / Microsemi

Product CategoryBipolar Transistors - BJT

SubcategoryTransistors

ManufacturerMicrochip

DescriptionBipolar Transistors - BJT Power BJT

USHTS8541290095