参数项参数值
参数项参数值
Collector- Base Voltage VCBO250 V
Maximum DC Collector Current5 A
Collector- Emitter Voltage VCEO Max200 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage400 mV
MXHTS85412999
KRHTS8541299000
Package / CaseTO-66-2
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 200 C
CNHTS8541290000
PackagingTray
TARIC8541290000
ImageMicrochip / Microsemi 2N5664
RoHSN
Factory Pack Quantity100
Product TypeBJTs - Bipolar Transistors
BrandMicrochip / Microsemi
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT Power BJT
ManufacturerMicrochip
USHTS8541290095