参数项参数值
参数项参数值
Collector- Base Voltage VCBO60 V
Collector- Emitter Voltage VCEO Max60 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage2 V
DC Collector/Base Gain hfe Min20
Package / CaseTO-66-2
Mounting StyleThrough Hole
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 200 C
PackagingTray
ImageMicrochip / Microsemi 2N6317
RoHSN
Factory Pack Quantity100
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation90 W
BrandMicrochip / Microsemi
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerMicrochip
DescriptionBipolar Transistors - BJT Power BJT