2N6295

2N6295

厂牌：iscsemi

包装：TRAY 1

类目：元器件 > 分立器件 > 双极晶体管

编号：B000045663602

描述： Silicon NPN Darlington Power Transistor

商品参数

参数项参数值

参数项参数值

DC Current Gain hFE Max18000

Gain Bandwidth Product fT-

Collector- Base Voltage VCBO80 V

Maximum DC Collector Current8 A

Collector- Emitter Voltage VCEO Max80 V

Continuous Collector Current4 A

ConfigurationSingle

TechnologySi

Transistor PolarityNPN

Emitter- Base Voltage VEBO5 V

Collector-Emitter Saturation Voltage3 V

DC Collector/Base Gain hfe Min750

Package / CaseTO-66-2

Mounting StyleThrough Hole

Maximum Operating Temperature+ 200 C

Minimum Operating Temperature- 65 C

PackagingTray

RoHSN

ImageMicrochip / Microsemi 2N6295

BrandMicrochip / Microsemi

Pd - Power Dissipation50 W

Factory Pack Quantity100

Product TypeBJTs - Bipolar Transistors

ManufacturerMicrochip

Product CategoryBipolar Transistors - BJT

SubcategoryTransistors

DescriptionBipolar Transistors - BJT Power BJT