参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max30 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
MXHTS85412101
Width2.7 mm
Height10.8 mm
Length7.8 mm
KRHTS8541299000
CNHTS8541290000
Package / CaseSOT-32-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 65 C
PackagingTube
TARIC8541210000
Series2SD882
BrandSTMicroelectronics
RoHS Details
ImageSTMicroelectronics 2SD882
Product CategoryBipolar Transistors - BJT
Unit Weight0.002116 oz
Factory Pack Quantity2000
SubcategoryTransistors
ManufacturerSTMicroelectronics
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation12500 mW
USHTS8541290095
DescriptionBipolar Transistors - BJT NPN Medium Power +30VCEO +5VBEO