参数项参数值
参数项参数值
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current5 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current3 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage1.2 V
MXHTS85412101
DC Collector/Base Gain hfe Min150
KRHTS8541299000
CNHTS8541210000
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
PackagingTube
TARIC8541210000
RoHS Details
Series2ST31A
BrandSTMicroelectronics
ImageSTMicroelectronics 2ST31A
Unit Weight0.081130 oz
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity1000
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerSTMicroelectronics
Pd - Power Dissipation40 W
DescriptionBipolar Transistors - BJT Low voltage NPN Power Transistor
USHTS8541290095