参数项参数值
参数项参数值
Maximum Collector Emitter Saturation Voltage0.2 V
Current Transfer Ratio130 % to 260 %
If - Forward Current20 mA
Maximum Collector Current50 mA
Width4.58 mm
Output TypeNPN Phototransistor
Height4.5 mm
Length6.5 mm
Maximum Collector Emitter Voltage35 V
KRHTS8541409029
Package / CaseDIP-4
Mounting StyleThrough Hole
Vr - Reverse Voltage6 V
Maximum Operating Temperature+ 110 C
CAHTS8541400091
Minimum Operating Temperature- 55 C
CNHTS8541409000
Collector-Emitter Breakdown Voltage35 V
Fall Time18 us
PackagingTube
TARIC8541409090
RoHS Details
Unit Weight0.067279 oz
ImageEverlight EL817(B)-VG
BrandEverlight
Pd - Power Dissipation200 mW
ManufacturerEverlight
Factory Pack Quantity100
Product TypeTransistor Output Optocouplers
Product CategoryTransistor Output Optocouplers
Isolation Voltage5000 Vrms
SubcategoryOptocouplers
USHTS8541408000
DescriptionTransistor Output Optocouplers Optocoupler Transistor DC Input
Vf - Forward Voltage1.4 V
Number of Channels1 Channel
Rise Time18 us
Moisture Sensitivity Level1 (Unlimited)