APT38N60BC6

APT38N60BC6

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045668206

描述：

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage3 V

TechnologySi

Id - Continuous Drain Current38 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time14 ns

Width16.26 mm

Rds On - Drain-Source Resistance99 mOhms

Typical Turn-Off Delay Time118 ns

Length21.46 mm

Height5.31 mm

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge112 nC

Package / CaseTO-247-3

Mounting StyleThrough Hole

JPHTS8541290100

CAHTS8541290000

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

PackagingTube

CNHTS8541290000

BrandMicrochip / Microsemi

Factory Pack Quantity1

ManufacturerMicrochip

Channel ModeEnhancement

TARIC8541290000

Product CategoryMOSFET

RoHS Details

DescriptionMOSFET FG, MOSFET, 600V, 38A, TO-247

Fall Time69 ns

ImageMicrochip / Microsemi APT38N60BC6

Product TypeMOSFET

Unit Weight1.340411 oz

SubcategoryMOSFETs

USHTS8541290095

Pd - Power Dissipation278 W

Vds - Drain-Source Breakdown Voltage600 V

Number of Channels1 Channel

Rise Time29 ns