参数项参数值
参数项参数值
Forward Transconductance - Min43 S
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current56 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time38 ns
Rds On - Drain-Source Resistance85 mOhms
Typical Turn-Off Delay Time100 ns
Width20.5 mm
Height5.21 mm
Length26.49 mm
MXHTS85412999
Qg - Gate Charge220 nC
KRHTS8541299000
Package / CaseTO-264-3
Mounting StyleThrough Hole
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
CNHTS8541290000
Fall Time33 ns
PackagingTube
TARIC8541290000
RoHS Details
Unit Weight0.373904 oz
ImageMicrochip / Microsemi APT56M50L
BrandMicrochip / Microsemi
Factory Pack Quantity1
Pd - Power Dissipation780 W
Product TypeMOSFET
ManufacturerMicrochip
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET FG, MOSFET, 500V, TO-264
Vds - Drain-Source Breakdown Voltage500 V
USHTS8541290095
TradenamePower MOS 8
Rise Time45 ns