APT56M50B2

APT56M50B2

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045668239

描述：

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min43 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage4 V

Id - Continuous Drain Current56 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 30 V, + 30 V

Typical Turn-On Delay Time38 ns

Rds On - Drain-Source Resistance85 mOhms

Typical Turn-Off Delay Time100 ns

Width16.26 mm

Height5.31 mm

Length21.46 mm

MXHTS85412999

Qg - Gate Charge220 nC

KRHTS8541299000

Package / CaseT-MAX-3

Mounting StyleThrough Hole

JPHTS8541290100

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

CAHTS8541290000

Channel ModeEnhancement

CNHTS8541290000

Fall Time33 ns

PackagingTube

TARIC8541290000

RoHS Details

ImageMicrochip / Microsemi APT56M50B2

BrandMicrochip / Microsemi

Pd - Power Dissipation780 W

Factory Pack Quantity1

Product TypeMOSFET

ManufacturerMicrochip

Product CategoryMOSFET

SubcategoryMOSFETs

DescriptionMOSFET FG, MOSFET, 500V, TO-247 T-MAX

Vds - Drain-Source Breakdown Voltage500 V

USHTS8541290095

TradenamePower MOS 8

Number of Channels1 Channel

Rise Time45 ns