参数项参数值
参数项参数值
Forward Transconductance - Min-
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current53 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time14 ns
Rds On - Drain-Source Resistance70 mOhms
Typical Turn-Off Delay Time151 ns
Qg - Gate Charge154 nC
Package / CaseTO-247-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time74 ns
PackagingTube
RoHS Details
Unit Weight0.229281 oz
ImageMicrochip / Microsemi APT53N60BC6
BrandMicrochip / Microsemi
Factory Pack Quantity1
Pd - Power Dissipation417 W
Product TypeMOSFET
ManufacturerMicrochip
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET FG, MOSFET, 600V, 53A, TO-247
Vds - Drain-Source Breakdown Voltage600 V
Rise Time36 ns