参数项参数值
参数项参数值
Forward Transconductance - Min55 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current75 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time45 ns
Rds On - Drain-Source Resistance75 mOhms
Typical Turn-Off Delay Time120 ns
MXHTS85412999
Qg - Gate Charge290 nC
KRHTS8541299000
Package / CaseT-MAX-3
Mounting StyleThrough Hole
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
CNHTS8541290000
Fall Time39 ns
PackagingTube
TARIC8541290000
RoHS Details
ImageMicrochip / Microsemi APT75F50B2
BrandMicrochip / Microsemi
Pd - Power Dissipation1.04 kW
Factory Pack Quantity1
Product TypeMOSFET
ManufacturerMicrochip
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET FG, FREDFET, 500V, TO-247 T-MAX
Vds - Drain-Source Breakdown Voltage500 V
USHTS8541290095
Number of Channels1 Channel
Rise Time55 ns