参数项参数值
参数项参数值
Forward Transconductance - Min65 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current70 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Rds On - Drain-Source Resistance90 mOhms
Typical Turn-Off Delay Time225 ns
MXHTS85412999
Qg - Gate Charge330 nC
KRHTS8541299000
Package / CaseTO-264-3
Mounting StyleThrough Hole
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
CNHTS8541290000
Fall Time70 ns
PackagingTube
TARIC8541290000
RoHS Details
Unit Weight0.352740 oz
ImageMicrochip / Microsemi APT66F60L
BrandMicrochip / Microsemi
Pd - Power Dissipation1.135 kW
Factory Pack Quantity1
Product TypeMOSFET
ManufacturerMicrochip
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET FG, FREDFET, 600V, TO-264
Vds - Drain-Source Breakdown Voltage600 V
USHTS8541290095
Number of Channels1 Channel
Rise Time85 ns